?guangdong hottech industrial co.,ltd e-mail:hkt@ heketai.com 1 / 4 HCN5551(npn) general purpose transistor replacement type :2n5551 features ? general purpose switching application maximum ratings (t a =25c unless otherwise noted) electrical characteristics (t a =25c unless otherwise noted) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =100a, i e =0 180 v collector-emitter breakdown voltage v ceo i c =1ma, i b =0 160 v emitter-base breakdown voltage v ebo i e =10a , i c =0 6 v collector cut-off current i cbo v cb =120v , i e =0 50 na emitter cut-off current i ebo v eb =4v , i c =0 50 na dc current gain h fe(1) v ce =5v , i c =1ma 80 h fe(2) v ce =5v , i c =10ma 80 300 h fe(3) v ce =5v , i c =50ma 50 collector-emitter saturation voltage v ce(sat) i c =10ma , i b =1ma 0.15 v v ce(sat) i c =50ma , i b =5a 0.2 v base-emitter saturation voltage v be(sat) i c =10ma , i b =1ma 1 v v be(sat) i c =50ma , i b =5a 1 v transition frequency f t v ce =5v , i c =10ma,f=30mhz 100 300 mhz collector output capacitance c ob v cb =10v,i e =0, f=1mhz 6 pf emitter input capacitance c ib v be =0.5v,i c =0, f=1mhz 20 pf *pulse test: pulse width 300s, duty cycle 2.0%. classification of h fe rank a b c range 80-100 100-150 150-200 200-300 parameter symbol value unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6 v collector current-continuous i c 0.6 a collector power dissipation p c 625 mw junction temperature t j 150 c thermal resistance from junction t o ambient r ja 200 c/w storage temperature t stg -55~+150 c to-92 1:emitter 2:base 3:collector
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 HCN5551(npn) general purpose transistor typical characteristics 0.1 1 10 1 10 100 0.2 0.4 0.6 0.8 1.0 1 10 100 11 0 100 1 10 100 10 100 0 25 50 75 100 125 150 0 125 250 375 500 625 750 024681 01 2 0 3 6 9 12 15 18 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1 10 100 0.01 0.1 f=1mhz i e =0 / i c =0 t a =25 capacitance c (pf) reverse voltag e v (v) c ob c ib c ob / c ib ? ? v cb / v eb v be ?? i c collector current i c (ma) base-emit ter voltage v be (v) t a =25 t a =100 v ce =10v t a =25 collector current i (ma) transi tion frequency f t (mhz) i c f t ?? commo n emitter v ce =5v collector current i c (ma) dc current gain h fe t a =25 t a =100 common emitter v ce =5v i c h fe ?? collecto r power dissipation p c (mw) ambient t emperature t a ( ) p c ?? t a common emitter t a =25 40ua 50ua 70ua 90ua 80ua 60ua 30ua i b =20ua collector-emitter voltage v ce (v) collector current i c (ma) stat ic characteristic =10 t a =100 t a =25 collector current i c (m a) base- emit t er saturation voltage v besat (v) i c v besat ?? 0.3 200 200 200 3 150 50 30 20 20 200 500 collector current i c (m a) =10 collector-emitter saturation voltag e v cesa t (v) t a =25 t a =100 v cesat ?? i c
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 HCN5551(npn) general purpose transistor symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4.300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 to-92 package outline dimensions symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4.300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 to-92 package outline dimensions
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 HCN5551(npn) general purpose transistor to-92 package tapeing dimension
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